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RESURF Ga2O3-On-SiC Field Effect Transistors for Enhanced Breakdown Voltage

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11040932

Authors: Junting Chen, Junlei Zhao, Xiaohan Zhang, Jin Wei, Mengyuan Hua

Institutions: Southern University of Science and Technology, Peking University

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411799271

FWCI:

Cites: 11

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Related to: 10