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Enabling Broader Memory Windows by Double-Gate Nanosheet Ferroelectric FETS for Next-Generation Non-Volatile Memory Storage

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11041135

Authors: F. Wu, C.-Y. Chiu, T.-Y. Lin, C.-H. Wu, V. P.-H. Hu, P. Su, C.-J. Su

Institutions: National Yang Ming Chiao Tung University, National Taiwan University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411799289

FWCI:

Cites: 7

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Related to: 10