Work

High Dielectric Constant of HfO2 Technology for Memory Applications

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11041123

Authors: Min-Hung Lee, Zhao-Feng Luo, Chun-Yu Liao, Kuo-Yu Hsiang, Jia-Yang Lee, Fu-Shen Chang, Yii-Tay Chang, Cheng-Hong Liu, Che-Chi Cheng

Institutions: National Taiwan University, National Taiwan Normal University, National Yang Ming Chiao Tung University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Semiconductor Research Corporation, Ministry of Science and Technology, National Taiwan University

Awards: G272663077, G7711372344, G7932724353

OpenAlex ID: W4411799290

FWCI:

Cites: 17

Cited by:

Related to: 10