Work

Effect of the Channel Thickness on the Pbs Reliability and 1/f Noise of the ALD Ultrathin ITO Field-Effect Transistor

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11041632

Authors: Jiaming Zhao, Peiyan Hong, Xuefei Li

Institution: Huazhong University of Science and Technology

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411799291

FWCI:

Cites: 8

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Related to: 10