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Neural Network Assisted MOSFETs Gate Dielectric Traps Extraction

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11041066

Authors: Xiaoyan Liu, Jinghan Xu, Zheng Zhou

Institution: Peking University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Research and Development

Awards: G1706364374, G2866815622

OpenAlex ID: W4411799293

FWCI:

Cites: 6

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Related to: 10