Work

Synergetic Effect of Doping and Oxygen Vacancies to Realize Higher Permittivity and Lower Leakage for DRAM Capacitors: A First-Principles Study

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11041413

Authors: Ting Zhang, Maokun Wu, Miaojia Yuan, Yichen Wen, Yilin Hu, Pengpeng Ren, Sheng Ye, Runsheng Wang, Zhigang Ji, Ru Huang

Institutions: Shanghai Jiao Tong University, Peking University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G8338343301

OpenAlex ID: W4411799295

FWCI:

Cites: 15

Cited by:

Related to: 10