Work

Robust OS-FeFETs with Crystallized Anatase-TiO2 Channel-Hafnia Ferroelectric Layer Stack for Integration of 3D Memory Applications

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11041227

Authors: J.F. Kang, X.J. Song, C.X. Yu, D.J. Sun, J.J. Zhang, S.Z. Li, X.Y. Liu

Institution: Peking University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G1680790843

OpenAlex ID: W4411799296

FWCI: 2.3

Cites: 11

Cited by: 1

Related to: 10