Work

Comprehensive Analysis of Oxidant Effects During ALD Process of Hf0.5Zr0.5O2 Ferroelectric Thin Films

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11040660

Authors: Xiaopeng Li, Yilin Hou, Xiaoyu Dou, Yaoyu He, Yuwei Qu, Pengpeng Sang, Xuepeng Zhan, Xiaolei Wang, Jixuan Wu, Jiezhi Chen

Institutions: Shandong University, Chinese Academy of Sciences, Institute of Microelectronics

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, China Postdoctoral Science Foundation, Natural Science Foundation of Shandong Province

Awards: G2893905287, G5558028600, G8072297921

OpenAlex ID: W4411799298

FWCI:

Cites: 15

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Related to: 10