Enhanced Gate Stack Reliability Test Framework for Gan Hemt in High-Stress Environments Leveraging on Ramp and Constant Voltage Stress Protocols
Year: 2025
Type: conference-paper
Authors: Jerry Joseph James, Nagarajan Raghavan
Institution: Singapore University of Technology and Design
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
Award: G1516548749
OpenAlex ID: W4411799300
