Work

A Novel Transistor Free Design of SOT-MRAM Written by Unipolar Current with Record Bit Cell Size (15F2)

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11040438

Authors: Meiyin Yang, Lei Zhao, Bowen Yang, Bowen Shen, Yanru Li, Peiyue Yu, Jianfeng Gao, Ruipeng Shi, Zhuangzhuang Ye, Shuo Xu, Yan Cui, Xiaolei Yang, Ming Wang, Shikun He, Kaiming Cai, Jun Luo

Institutions: Chinese Academy of Sciences, Huazhong University of Science and Technology

Language: English

Topic: Magnetic properties of thin films

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411799311

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