Work

Global Stress Analysis in Fin Patterned Si/SiGe Multilayer Nanosheets for Nanosheet-Based CMOS Device Technology

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11040338

Authors: Amit Kumar Singh Chauhan, Imtiyaz Ahmad Khan, Kunal, Harsh Raju, Sanjeev Kumar Manhas

Institution: Indian Institute of Technology Roorkee

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411799316

FWCI: 4.717

Cites: 7

Cited by: 2

Related to: 10