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The Atomic Layer Etching Technique with Low Damage for p-GaN/AlGaN/GaN Structure

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11040505

Authors: Xinyi Tang, Honghao Lu, Chun Fu, Chuying Tang, Fangzhou Du, Qing Wang, Hongyu Yu

Institution: Southern University of Science and Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G2413553065

OpenAlex ID: W4411799322

FWCI: 2.515

Cites: 10

Cited by: 1

Related to: 10