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Hafnia-Based XP-FeRAM: A Novel High-Speed and Low-Power Cross-Point Ferroelectric Memory for Data-Intensive Applications

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11040540

Authors: Qianqian Huang, Shengjie Cao, Zhiyuan Fu, Ru Huang

Institution: Peking University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4411799331

FWCI:

Cites: 13

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Related to: 10