Work

Ferroelectric 3D NAND Storage (Invited)

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11041675

Authors: Prasanna Venkatesan, Asif Khan

Institution: Georgia Institute of Technology

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411799333

FWCI: 2.358

Cites: 16

Cited by: 1

Related to: 10