Work

Impact of Load-Si Thickness and Punch-Through Stopper Doping on the Electrical Performance of SOI Gate-All-Around Field-Effect Transistors

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11040734

Authors: Longyu Sun, Jiayi Zhang, Yan Li, Haoyan Liu, Xi Zhang, Yongliang Li

Institutions: Chinese Academy of Sciences, Beijing Information Science & Technology University, Institute of Microelectronics

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4411799348

FWCI:

Cites: 5

Cited by:

Related to: 10