Work

Heterointegrated Ga2O3-On-SiC RF MOSFETS

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11040172

Authors: Xinxin Yu, Wenhui Xu, Rui Shen, Bing Qiao, Zhonghui Li, Xin Ou, Jiandong Ye

Institutions: Nanjing University, Chinese Academy of Sciences, Shanghai Institute of Microsystem and Information Technology

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411799359

FWCI:

Cites: 13

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Related to: 10