Wavelength-Dependent Reconfigurable Photo Memory Enabled by Organic-Gated Transistor
Year: 2025
Type: conference-paper
Abstract: We presented a reconfigurable two-dimensional (2D) phototransistor, fabricated by integrating a J-aggregate PTCDI-$\mathrm{C}_{13}$charge-trapping. This phototransistor exhibited switchable volatile and non-volatile photo response behaviors, controlled by the tunable drain voltage ($V_{\text{ds}}$). At a negative$V_{\text{ds}}$, the device operates as a photodetector with a volatile photo response, while at positive$V_{\text{ds}}$, the photo transistor served as a photo memory achieving a high resistance ratio of approximately 103. The device demonstrates selectively retaining memory within a narrow wavelength, consistent with the absorption peak of the monolayer J-aggregate PTCDI-C13, showing the potential for wavelength-specific, reconfigurable photo-memory applications.
Authors: Xiaokun Guo, Yaoqiang Zhou, Jianbin Xu
Institution: Chinese University of Hong Kong
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4411799360