Work

Low V on β -Ga₂O₃ Schottky Diodes With Synergistic Suppression of Bulk and Perimeter Leakage

Year: 2025

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2025.3584109

Authors: Zhao Han, Weibing Hao, Qiuyan Li, Junpeng Wen, Lequan Wang, Xuanze Zhou, Guangwei Xu, Shu Yang, Shibing Long

Institution: University of Science and Technology of China

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China, Foundation Research Project of Jiangsu Province

Awards: G2103278621, G2565301599, G4700815263, G5950108647, G6813758816, G8528916017, G8991935312

OpenAlex ID: W4411799361

FWCI: 0.489

Cites: 30

Cited by: 3

Related to: 10