Work

Understanding the Impact of Discrete Trap Positions and Mapping the Hysteresis Dynamics in $\text{MoS}_{2}$ FETs by Advanced TCAD Modeling

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11041386

Authors: Y.Z. Lv, Y.J. Chai, Yu.Yu. Illarionov

Institution: Southern University of Science and Technology

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Shenzhen Science and Technology Innovation Program

Awards: G5809577642, G6954165900

OpenAlex ID: W4411799362

FWCI:

Cites: 8

Cited by:

Related to: 10