Work

Direct Backside Contact Impact on 3-Dimensional Stacked FET SRAM Beyond 1nm Node

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11041516

Authors: Mingyu Kim, Jaehyun Park, Sungil Park, Kyunghwan Lee, Deuk Ho Yeon, Daewon Ha, Hyungcheol Shin

Institutions: Seoul National University, Samsung Electronics (South Korea)

Language: English

Topic: 3D IC and TSV technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4411799374

FWCI:

Cites: 13

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Related to: 10