Work

Enhanced Threshold Switching Devices Based on Conductive Filaments in SiOx Through Vertically Aligned MoS2 Layers

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11041161

Authors: Jimin Lee, Sofía Cruces, Dennis Braun, Lukas Völkel, Ke Ran, Joachim Mayer, Alwin Daus, Max C. Lemme

Institutions: RWTH Aachen University, AMO (Germany)

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411799378

FWCI:

Cites: 7

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Related to: 10