Work

Improved Ohmic Contact Resistance and DC Performance of InAlN/GaN HEMTs with Si-Incorporated Contact Scheme

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11041155

Authors: Yang Jiang, Fangzhou Du, Xinyi Tang, Ziyang Wang, Kangyao Wen, Zhongrui Wang, Qing Wang, Hongyu Yu

Institution: Southern University of Science and Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G2413553065

OpenAlex ID: W4411799385

FWCI: 2.515

Cites: 9

Cited by: 1

Related to: 10