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GIT-Based Bipolar $p$-FET with Enhanced Conduction Capability on $E$-mode GaN-on-Si HEMT Platform

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11040616

Authors: Chengcai Wang, Jinjin Tang, Junting Chen, Mengyuan Hua

Institution: Southern University of Science and Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G2794510583

OpenAlex ID: W4411799390

FWCI:

Cites: 14

Cited by:

Related to: 10