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9-kV p-GaN Gate HEMT with Gate Termination Extension Demonstrated on Sapphire Substrate for Improved Breakdown Voltage

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11040986

Authors: Jingjing Yu, Junjie Yang, Jiawei Cui, Hao Chang, Sihang Liu, Yunhong Lao, Xuelin Yang, Xiaosen Liu, Maojun Wang, Bo Shen, Jin Wei

Institutions: Peking University, Tsinghua University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411799397

FWCI: 5.03

Cites: 15

Cited by: 2

Related to: 10