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Self-Heating and Bias Temperature Instability in Recessed-Gate GaN MIS-HEMTs with AlN/SiNx Bilayer Dielectric

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11040499

Authors: Xin Wang, Hongyue Wang, Chen Wang, Jiayin He, Ju Gao, Bin Zhang, Ziheng Liu, Hongjie Peng, Chengkang Ao, Jiahui Yuan, Jinyan Wang

Institutions: Peking University, China Electronic Product Reliability and Environmental Test Institute

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411799433

FWCI:

Cites: 8

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Related to: 10