Work

Structure Design and Characteristics of 3T Sense-Switch Pflash for Computing-Inmemory

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11040759

Authors: Wei Zhao, Jinghe Wei, Guozhu Liu, Yidan Wei, Yingqiang Wei, Zhiyuan Sui, Meijie Liu, Qi Xi, Xinhe Wang, Zongguang Yu, Juyan Xu

Institutions: China Electronics Technology Group Corporation, Beihang University

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G1365496876

OpenAlex ID: W4411799451

FWCI:

Cites: 1

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