Work

Effect of Fin Dimensions on the Performance of Gan-on-Si Fin-HEMTs

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11041606

Authors: Mengdi Li, Jiejie Zhu, Lingjie Qin, Bowen Zhang, Yuxi Zhou, Mingchen Zhang, Yichong Ding, Yuchen Qian, Xiaohua Ma, Yue Hao

Institution: Xidian University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411799481

FWCI:

Cites: 10

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Related to: 10