Work

Investigation of Passivation Layers for Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors with Metal-Reacted Low-Resistance Source/Drain

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11040590

Authors: Yuhan Zhang, Jiye Li, Hao Peng, Huan Yang, Lei Lu, Shengdong Zhang

Institution: Peking University

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411799512

FWCI: 7.075

Cites: 12

Cited by: 3

Related to: 10