Work

50 NM Gan Hemts Technology with High Frequency, Low Noise, and High JFoM

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11040783

Authors: Yun Zhang, Jiaheng He, Changxin Mi, Xuankun Wu, Shujie Xie, Zhe Cheng, Lian Zhang

Institutions: Chinese Academy of Sciences, Institute of Semiconductors

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411799520

FWCI: 5.181

Cites: 10

Cited by: 2

Related to: 10