Work

Improved Breakdown Voltage and Leakage Current in $\beta$Ga2O3 Schottky Barrier Diode Realized by N Ion-Implantation Edge Termination

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11041272

Authors: Hao Zhang, Xinlong Zhou, Yinchi Liu, Jining Yang, Handong Zhu, Xun Lu, Shiyu Li, Yeye Guo, Chunlei Wu, Xuning Zhang, Zhenxin Wang, Yaoyi Wang, Ruli Zeng, Yiwen Yu, Wenjun Liu

Institution: Fudan University

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funders: Science and Technology Commission of Shanghai Municipality, National Key Research and Development Program of China

Awards: G1145101426, G8405862932

OpenAlex ID: W4411799525

FWCI:

Cites: 10

Cited by:

Related to: 10