Work

Physics of Operation of GaN Power Devices: Modeling Device and Circuit Effects Using Mit Virtual Source GaNFET (MVSG) Model

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11040817

Authors: Ujwal Radhakrishna, Daiyao Xu, Kaiman Chan, Tim Merkin, Ryan Fang, Johan Alant, Lan Wei

Institution: Texas Instruments (United States)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411799659

FWCI:

Cites: 2

Cited by:

Related to: 10