Work

Optimized Electric Field Distribution and Dynamic Performance in GaN HEMTs Using Segmented-Extended $\boldsymbol{p}-\mathbf{GaN}$ Gate Structures

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11041330

Authors: Xinyue Dai, Haiyang Li, Qimeng Jiang, Xiaoping Wang, Yuxi Wan

Institutions: Chinese Academy of Sciences, Institute of Microelectronics

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4411799661

FWCI: 2.591

Cites: 8

Cited by: 1

Related to: 10