Work

Modelling and Design of Short Channel Ferroelectric FETs with a Metal Interlayer Easing the Multilevel Operation

Year: 2025

Type: conference-paper

Abstract: This work presents a simulation study of a ferroelectric field effect transistor (FeFET), which leverages a metal interlayer to achieve a multilevel operation thanks to the interplay between the ferroelectric polarization and the charge stored in the interlayer. We show that the metal interlayer can effectively stabilize the ferroelectric polarization even for a negligible charge trapping in the dielectric stack and, moreover, enable a multilevel operation even for a uniform ferroelectric polarization.

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11040846

Authors: Chiara Rossi, Daniel Lizzit, David Esseni

Institution: University of Udine

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

Funder: H2020 Marie Skłodowska-Curie Actions

Award: G3464374412