Work

Selective-Ferroelectricity-Defining Method Utilizing Directional Oxygen Plasma Treatment for Optimizations of Hf0.5Zr0.5O2-Based Memory Devices

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11040259

Authors: Yi Ding, Mingcheng Shi, Yuyan Wang, Bowen Shen, Wen Sun, Benjamin Yang, Yanbo Su, Huanan Liu, Jian Yuan, Jianshi Tang, Bin Gao, He Qian, Huaqiang Wu

Institution: Tsinghua University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411799669

FWCI:

Cites: 5

Cited by:

Related to: 10