Work

Parameters of ohmic contacts and consideration of the influence of actual sample sizes on the field dependence of the drift velocity in In0.16Ga0.84As layers

Year: 2025

Type: article

Abstract: The method of obtaining ohmic contact to In0.16Ga0.84As layers is given in this paper. Contact resistance was measured by the transmission line method with radial geometry of contacts. It is shown that the Ni/Au/Ge/Au/Ge/Ni/Au-based contact is ohmic and reaches a minimum specific contact resistance of 6∙10-5 Ohm∙cm2 after annealing at 450 °C for 5 min. in the atmosphere of forming gas. To measure the dependence of the drift velocity on a high electric field, a sample with a specific shape was chosen that prevents the penetration of high field domains into the measurement area. An expression is obtained that allows for accurate calculation of electric field strength and drift velocity, considering the actual geometric sizes of the sample as determined by scanning electron microscopy. It is shown that the obtained expression allows us to obtain the same field dependences of the drift velocity for In0.16Ga0.84As samples with different geometrical sizes.

Source: Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering

Authors: V. A. Kuznetsov, D. Yu. Protasov, D. V. Dmitriev, V. Ya. Kostyuchenko, D. I. Rogilo, K. S. Zhuravlev

Institutions: Siberian Branch of the Russian Academy of Sciences, Institute of Semiconductor Physics, Novosibirsk State Technical University, Siberian State University Geosystems and Technology

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: diamond

OpenAlex ID: W4411812022

FWCI: 0.385

Cites: 21

Cited by: 1

Related to: 10