Work

Effect of Hole Blocking Materials on the Performance of OLED

Year: 2025
Type: article
Abstract: This work investigated green fluorescence Organic Light Emitting Diode (OLED) with four hole blocking materials HBMs. Aims to enhance color performance in QD-OLED panels to produces a set of light with red, green, and blue sub-pixels. The HBM examined in this scenario consist of: (4,7-diphenyl-1,10-phenanthroline)Bphen, Tris(8-hydroxyquinoline aluminium)Alq3, (2,2′,2″-(1, 3,5-benzinetriyl)-tris(1-phényl-1-H-benzimidazole)TPBi, (3-phényl-4(10-naphtyl)-5-phényl-1,2,4-triazole)TAZ. These holes blockings materials have different electron mobility and different hole-blocking barriers. A numerical model based on the drift-diffusion formalism was created to study electron and hole transport in OLEDs. The model includes continuity equations, conduction diffusion current, and the Poisson equation. The simulation showed the performance of each device was affected by these properties of each HBM. The width of the emission zone depends on the HBMs employed, and when the electron mobility increases the recombination zone is wide in the HBL. It was found that the device with Bphen, Alq3, TPBi, and TAZ have electrical and optical characteristics that are respectively: Langevin recombination rate (2.25 x1025 cm-3s-1, 1.74 x1025 cm-3s-1, 1.04x1025 cm-3s-1,1.79x1024 cm-3s-1), singlet exciton density (2.87x1014 cm-3, 2.2x1014 cm-3, 1.31x1014 cm-3, 0.22x1014 cm-3), luminance (4700 cd/m2, 4500 cd/m2, 4400 cd/m2, 3200 cd/m2). Our study provides a model system to examine the role of hole blocking materials on OLED optoelectronic properties.
Author: Samira Mehdi
Institution: University of Blida
Language: English
Open Access status: hybrid
OpenAlex ID: W4411905882
FWCI:
Cites: 32
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Related to: 10