Work

Reliability Study of Self-Aligned Top-Gated a-IGZO TFTs by N2 and N2O Plasma Treatment

Year: 2025

Type: conference-paper

Source: International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA)

DOI: 10.1109/vlsitsa64674.2025.11047127

Authors: Yuan-Ming Liu, Hsien-Ming Sung, Yu-Shan Wu, Rang-Wei Ma, Johannes Gracia, Hidenari Fujiwara, Tsang-Long Chen, Cheng-Hsu Chou, C. W. Liu

Institutions: National Taiwan University, InnoLux (Taiwan)

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411951175

FWCI:

Cites:

Cited by:

Related to: 10