Year: 2025
Type: article
Abstract: The synthesis of layered tin diselenide (SnSe2) and tin selenide (SnSe) can be achieved independently through distinct nucleation pathways using chemical vapor deposition (CVD). This study successfully achieves the simultaneous growth of SnSe₂ and SnSe, two structurally and functionally distinct tin selenide phases, through hot‐wall CVD. For the first time, this is accomplished through an innovative yet facile synthesis method involving a linear arrangement of precursor granules, which effectively overcame the typical limitations of synthesizing SnSe2 and SnSe from Se powder and SnI₂ granules. The dual‐phase growth is realized through precise control of precursor gradients, substrate temperature, and growth duration, with selenium stoichiometry and thermodynamic stability criteria dictated phase formation. A transport model is proposed to describe precursor concentration distribution and reaction rates, elucidating shape evolution and the combined growth of SnSe2 and SnSe. This study enhances the understanding of competitive growth dynamics and highlights the potential for multifunctional lateral heterostructures and phase‐engineered materials for optoelectronic and thermoelectric applications.
Source: Advanced Materials Interfaces
Authors: Manab Mandal, Prahalad K. Barman, Sagar Chowdhury, D. Manikandan, Nilanjan Basu, Pramoda K. Nayak, Kanikrishnan Sethupathi
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $3,100
Award: G6626806896
OpenAlex ID: W4411965268