Work

High Performance Enhancement Mode Dual Electron Layer High Electron Mobility Transistor: Design and Analysis

Year: 2025

Type: article

Source: Journal of Nanoelectronics and Optoelectronics

DOI: 10.1166/jno.2025.3746

Authors: Misbah Noor, Abdullah G. Alharbi, Sultan S. Aldkeelalah, Sajad A. Loan

Institutions: Jamia Millia Islamia, Princess Nourah bint Abdulrahman University, Jouf University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4412009884

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