Work

Modified Angelov Model with Improved Accuracy for RF GaN-on-Si HEMTs

Year: 2025

Type: conference-paper

Source: IEEE International Conference on Microelectronic Test Structures (ICMTS)

DOI: 10.1109/icmts63811.2025.11068906

Authors: David C. Chen, Min Li Chou, Kerwin Lin, Mike Hsieh, Perry Lin, Heng Ching Lin, Kevin Lee, Alex Hou, Barry Lin, M. C. Lai

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4412129607

FWCI:

Cites: 6

Cited by:

Related to: 10