Work

Quantized Conductance and Multilevel Memory Operation in Mn 3 O 4 Nanowire Network Devices Combined with Low Voltage Operation and Oxygen Vacancy Induced Resistive Switching

Year: 2025

Type: article

Abstract: Quantum effects in nanowires and nanodevices can potentially revolutionize the device concepts with multi‐functionalities for future technologies. Memristive devices which undergo transition from high resistance state to low resistance state involve nanoscale conduction paths can show quantum effects at room temperature. Here, Mn 3 O 4 nanowires based memristor showing very reliable resistive switching at very low voltages and with ON/OFF States ratio ∼ 10 3 is reported. The switching device can also be programmed to multiple memory states (up to 16 states ∼ 2 4 ). Since the conduction paths are geometrically constrained along the nanowires, quantized conductance steps are observed. Step‐wise conductance jumps are observed during the SET and RESET process with better control along RESET process. Conductance jumps range between 1 and 9 G 0 . The nanowire devices show very consistent resistive switching up to 100 °C. These measurements confirm extremely stable nanowire based resistive switching devices which can be used for next‐generation memories showing quantum effects in neuromorphic computing architectures.

Source: Advanced Electronic Materials

DOI: 10.1002/aelm.202500159

Authors: Keval Hadiyal, Ramakrishnan Ganesan, R. Thamankar

Institutions: Vellore Institute of Technology University, Birla Institute of Technology and Science - Hyderabad Campus, Birla Institute of Technology and Science, Pilani

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $3,560

Funders: VIT University, Birla Institute of Technology and Science, Pilani, Science and Engineering Research Board