Work

Single crystal halide perovskites for resistive switching memory devices and artificial synapse

Year: 2025

Type: article

Abstract: Single-crystal halide perovskites, with defect-lean ABX 3 structures, offer promising solutions for energy-efficient, reliable resistive-switching memories in AI and edge computing, overcoming challenges of grain boundaries and ion migration.

Source: Materials Advances

DOI: 10.1039/d5ma00609k

Author: Hyojung Kim

Institution: Sejong University

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: gold

Estimated APC paid: $1,962