Work

Investigating the Effects of AlGaN insertion Layers on Ultravoilet-C MicroLED Performance

Year: 2025

Type: conference-paper

Source: International Conference on Emerging Technologies in Electronics, Computing and Communication (ICETECC)

DOI: 10.1109/icetecc65365.2025.11070281

Authors: Shazma Ali, Muhammad Usman

Institution: Ghulam Ishaq Khan Institute of Engineering Sciences and Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Ghulam Ishaq Khan Institute of Engineering Sciences and Technology

OpenAlex ID: W4412405243

FWCI:

Cites: 12

Cited by:

Related to: 10