Work

Electrochemical epitaxial lift-off and transfer of InGaN/GaN heterostructure films for vertical micro-LED arrays

Year: 2025

Type: article

Source: Journal of Materials Chemistry C

DOI: 10.1039/d5tc01926e

Authors: Wenfeng Li, Peishan Li, Shujia Wang, Zexin Dong, Yuqing Yang, Chenguang He, Qiao Wang, Zhitao Chen, Kang Zhang, Xingfu Wang

Institutions: South China Normal University, Chinese Academy of Sciences, Guangzhou Institute of Energy Conversion, University of Electronic Science and Technology of China, Guangdong Academy of Sciences

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China, Basic and Applied Basic Research Foundation of Guangdong Province

Awards: G1759533342, G2541177616, G3602102342, G4451537539, G4577625770, G4734288273

OpenAlex ID: W4412412536

FWCI: 0.311

Cites: 44

Cited by: 1

Related to: 10