Year: 2025
Type: article
Abstract: Gallium nitride high-electron-mobility transistors (GaN HEMTs) are critical for high-power applications like AI power supplies and robotics but face reliability challenges due to increased dynamic ON-resistance (RDS_ON) from electrical and thermomechanical stresses. This paper presents a novel self-calibrating temperature-sensitive electrical parameter (TSEP) model that uses gate leakage current (IG) to estimate junction temperature with high accuracy, uniquely addressing aging effects overlooked in prior studies. By integrating IG, aging-induced degradation, and failure-in-time (FIT) models, the approach achieves a junction temperature estimation error of less than 1%. Long-term hard-switching tests confirm its effectiveness, with calibrated RDS_ON measurements enabling precise remaining useful life (RUL) predictions. This methodology significantly improves GaN HEMT reliability assessment, enhancing their performance in resilient power electronics systems.
Source: Nanomaterials
DOI: 10.3390/nano15141102
Authors: Yifan Cui, Yutian Gan, Kangyao Wen, Yang Jiang, Chunzhang Chen, Qing Wang, Hongyu Yu
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,896
OpenAlex ID: W4412472917