Work

Comprehensive Analysis of a 1.2 kV 4H-SiC DMOSFET with an Improved Short Circuit Withstand Time

Year: 2025

Type: conference-paper

DOI: 10.1109/pectea61788.2025.11076400

Authors: Ravi Prakash Gautam, Rachita Mohapatra, Wakar Hasan Kazi, Prashant Singh, Akshay K

Institutions: Indian Institute of Technology Bhubaneswar, Indian Institute of Technology Madras

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4412482360

FWCI:

Cites: 12

Cited by:

Related to: 10