Work

Wafer-Scale Polarity Engineering of Nitrides Enabled High-Mobility Two-Dimensional Electron Gas and Defective Luminescence

Year: 2025

Type: article

Source: ACS Applied Materials & Interfaces

DOI: 10.1021/acsami.5c08538

Authors: Jiaxin Liu, Qi Chen, Ruilin Mao, Szuyu Huang, Xiaoyue Gao, Peiyi He, Jiade Li, Ruochen Shi, Zhenzhong Wang, Zhiqiang Liu, Peng Gao

Institutions: Peking University, Chinese Academy of Sciences, Institute of Semiconductors, University of Chinese Academy of Sciences, Jiangsu Industry Technology Research Institute

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China

Awards: G252737441, G4972090712, G8903314159

OpenAlex ID: W4412488659

FWCI:

Cites: 56

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Related to: 10