Year: 2025
Type: article
Abstract: Micro and nano-semiconductor devices are increasingly crucial in multiple fields such as information technology and artificial intelligence. However, as the volume of transistors decreases and their density increases, local heat accumulation occurring in devices due to the Joule heating effect seriously affects their service life and performance. Therefore, thermal management of devices has become more and more important. As a key factor limiting heat dissipation, thermal boundary resistance (TBR) is particularly significant in nanoscale devices, accounting for over 50% of the total thermal resistance. The theoretical models of thermal boundary resistance can not only help accurately predict the thermal boundary resistance but also effectively understand its influence mechanism. This paper selects and introduces some typical classic theoretical models, elaborates on their characteristics and limitations, summarizes various influencing factors of thermal boundary resistance and provides an outlook on the future research of thermal boundary resistance.
Source: Theoretical and Natural Science
Author: Ce Li
Institution: North China Electric Power University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W4412494955