Work

Performance analysis of gate metal impact on InAlN/GaN/AlGaN HEMT for High-Speed RF applications

Year: 2025

Type: conference-paper

DOI: 10.1109/amathe65477.2025.11080714

Authors: Chevala Rambabu, Ramkumar Natarajan, S. Ravi, P Gnanapriya, N. Vigneshwari, S. Hariprasad

Institutions: SR University, SRM Institute of Science and Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4412568331

FWCI:

Cites: 16

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Related to: 10