Work

Physics-based reverse recovery modelling of ultrafast recovery Si diodes with carrier lifetime control

Year: 2025

Type: article

Source: International Journal of Powertrains

DOI: 10.1504/ijpt.2025.147105

Authors: Imen Abdennabi, Nathalie Batut, Ambroise Schellmanns, Marie Pierre Chauvat, Fabrice Roqueta, Arnaud Yvon, Sophie Ngo

Institutions: GREMAN, Matériaux, Microélectronique, Acoustique, Nanotechnologies, Centre de Recherche sur les Ions, les Matériaux et la Photonique, STMicroelectronics (France)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4412602183

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